Numerical modeling of current transport and polarization switching in Ferroelectric Tunnel Junctions with semiconductor electrodes
On March 18th 2021 at 2:00 pm (CET) an on-line seminar will be given by Giulio Franchini (Dipartimento di Elettronica, Informazione e Bioingegneria (DEIB), Politecnico di Milano).
Abstract of the talk
Ferroelectric Tunnel Junctions (FTJ) with semiconductor electrodes are today widely explored for their possible application as memory elements in high-density memory arrays and as synaptic devices in hardware artificial neural networks. In the attempt to optimize their operation in terms of resistive memory window and switching speed, the development of physics-based numerical models able to guide device design is essential. In this seminar, a 1D model able to reproduce the current-voltage characteristics of FTJ with a semiconductor electrode will be presented and validated against experimental data collected on Pt/BTO/Nb:STO FTJ after set/reset operations. The switching dynamics of the devices will also be addressed, showing some preliminary results obtained from a 2D model coupling polarization switching with current transport.
See G. Franchini et al., IEEE Transactions on Electron Devices 67, 3729 (2020). DOI: 10.1109/TED.2020.3011398
Details of the Zoom meeting
Use the following link to connect to the meeting:
https://polimi-it.zoom.us/j/82084505602
ID riunione: 820 8450 5602
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